leshan radio company, ltd. l2n7002fdw1t1g thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate,(note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j, t stg -55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. n?channel sc?88 ? small signal mosfet 30 volts ? (top view) simplified schematic we declare that the material of product are halogen free and compliance with rohs requirements. rev .o 1/4 features r ds(on) Q 8 ? @v gs =4v r ds(on) Q 13 ? @v gs =2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability capable doing cu wire bonding applications power management in note book portable equipment battery powered system load switch esd protected:1000v s 1 d 1 d 2 s 2 g 1 g 2 1 2 3 4 5 6 s-l2n7002fdw1t1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ? device marking shipping ordering information l2n7002fdw1t1g 72f 3000 tape & reel l2n7002fdw1t3g 72f 10000 tape & reel s-l2n7002fdw1t1g s-l2n7002fdw1t3g
leshan radio company, ltd. l2n7002fdw1t1g,s-l2n7002fdw1t1g rev .o 2/4 symbol parameter limit min typ max unit static bv dss drain-source breakdown voltage v gs =0v, i d =250 a 30 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 0.8 1.5 v i gss gate-body leakage v ds =0v, v gs =20v 10 a i dss zero gate voltage drain current v ds =30v, v gs =0v 1 a v gs =4v, i d =10ma 5 8 r ds(on) drain-source on-resistance* v gs =2.5v, i d =1ma 7 13 v sd diode forward voltage * i s =200ma, v gs =0v 1.2 v dynamic qg total gate charge 4.9 qgs gate-source charge 2.1 qgd gate-drain charge v ds =25v, v gs =10v, i d =0.22a 0.6 nc c iss input capacitance 21 c oss output capacitance 10 c rss reverse transfer capacitance v ds =25v, v gs =0v, f=1mhz 2 pf t d(on) turn-on delay time 10.1 t r turn-on rise time 7.3 t d(off) turn-off delay time 31.3 t f turn-off fall time v dd =5v, r l =500 v ges =5v,r g =10 28.2 ns notes: . pulse test; pulse width Q 300us, duty cycle Q 2%. parameter symbol maximum ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v electrical characteristics (t j =25 unless otherwise specified) absolute maximum ratings (t a =25 unless otherwise noted) *
leshan radio company, ltd. rev .o 3/4 typical characteristics (t j =25 noted) l2n7002fdw1t1g,s-l2n7002fdw1t1g
leshan radio company, ltd. typical characteristics (t j =25 noted) rev .o 4/5 l2n7002fdw1t1g,s-l2n7002fdw1t1g
leshan radio company, ltd. rev .o 5/5 sc?88 (sot?363) case 419b?02 style 1: pin 1. source 2 2. gate 2 3. drain 1 4. source 1 5. gate 1 6. drain 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h ??? 0.10 ??? 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 123 a g s h c n j k 654 ?b? d 6 pl scale 20:1 0.50 0.0197 1.9 0.0748 0.65 0.025 0.65 0.025 0.40 0.0157 mm inches soldering footprint* l2n7002fdw1t1g,s-l2n7002fdw1t1g
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